Diffusion of point defects in crystalline silicon using the kinetic activation-relaxation technique method

نویسندگان

  • Mickaël Trochet
  • Laurent Karim Béland
  • Jean-François Joly
  • Peter Brommer
  • Normand Mousseau
چکیده

Copyright and reuse: The Warwick Research Archive Portal (WRAP) makes this work by researchers of the University of Warwick available open access under the following conditions. Copyright © and all moral rights to the version of the paper presented here belong to the individual author(s) and/or other copyright owners. To the extent reasonable and practicable the material made available in WRAP has been checked for eligibility before being made available.

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تاریخ انتشار 2015